Micro Commercial Components Corp. Single FETs, MOSFETs MCG09P06HE3-TP

The MCG09P06HE3 is a P-channel trench MOSFET in a PDFN3333-B package, designed for power switching applications. It has a drain-source voltage rating of -60 V and continuous drain currents of -9 A at 25°C and -5.7 A at 100°C. The device features a maximum power dissipation of 28 W, with thermal resistance of 60°C/W junction-to-ambient and 4.5°C/W junction-to-case. It is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability standards. The gate threshold voltage ranges from -1 V to -3 V, and the on-resistance is 130 mΩ at -10 V gate bias. It supports a single-pulsed avalanche energy of 12 mJ and has a total gate charge of 10.7 nC.