NPN silicon bipolar transistor in TO-92 package for general-purpose amplification and switching, rated for 50 V collector-emitter voltage, 150 mA continuous collector current, and 400 mW power dissipation. Junction and storage temperature range is -55°C to +150°C. Thermal resistance is 312.5°C/W. DC current gain (hFE) falls in the 200-400 range for the GR grade. RoHS compliant with lead-free finish. Epoxy meets UL 94 V-0 flammability rating. Package dimensions are 4.30-4.70 mm wide and 12.70 mm long.
Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SC1815-GR-AP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
