MACOM mmW Power Amplifier XP1080-QU-0N0T

Description
Power Amplifier 37.0-40.0 GHz. The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Request a Quote Datasheet
Description
Power Amplifier 37.0-40.0 GHz. The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
mmW Power Amplifier - XP1080-QU-0N0T - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
XP1080-QU-0N0T
mmW Power Amplifier XP1080-QU-0N0T
Power Amplifier 37.0-40.0 GHz. The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.

Power Amplifier 37.0-40.0 GHz. The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number XP1080-QU-0N0T
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 37000 to 40000 MHz
Maximum Gain 25 dB
Unlock Full Specs
to access all available technical data

Similar Products

Low Phase Noise Amplifiers - HX2400 - Maury Microwave
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 8 to 4000 MHz
Minimum Gain 14 dB
View Details
2 - 20 GHz, Broadband Gain Block - ADM-11123PSM - Marki Microwave LLC
Specs
Frequency Range 2000 to 20000 MHz
Package Type Surface Mount; surface-mount
View Details
Specs
Applications RF Microwave
Package Type Surface Mount; 24-LFCSP-VQ (4x4)
View Details
Low Noise Amplifier Systems - NLAS-6000-18000-50-30 - kTB Solutions
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 6000 to 18000 MHz
Minimum Gain 50 dB
View Details