MACOM RF & MW Power Amplifier XP1043-QH-0G0T

Description
The XP1043-QH is a packaged linear power amplifier that operates over the 12 - 16 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4 mm QFN package. The packaged amplifier is comprised of a 3-stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.
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Description
The XP1043-QH is a packaged linear power amplifier that operates over the 12 - 16 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4 mm QFN package. The packaged amplifier is comprised of a 3-stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - XP1043-QH-0G0T - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
XP1043-QH-0G0T
RF & MW Power Amplifier XP1043-QH-0G0T
The XP1043-QH is a packaged linear power amplifier that operates over the 12 - 16 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4 mm QFN package. The packaged amplifier is comprised of a 3-stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.

The XP1043-QH is a packaged linear power amplifier that operates over the 12 - 16 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4 mm QFN package. The packaged amplifier is comprised of a 3-stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part.

The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number XP1043-QH-0G0T
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 12000 to 16000 MHz
Maximum Gain 21.5 dB
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