MACOM mmW Power Amplifier XP1026-BD-000V

Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
mmW Power Amplifier - XP1026-BD-000V - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
XP1026-BD-000V
mmW Power Amplifier XP1026-BD-000V
Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Supplier's Site Datasheet
RF and Wireless - RF Amplifiers - XP1026-BD-000V - Acme Chip Technology Co., Limited
Shenzhen, China
RF and Wireless - RF Amplifiers
XP1026-BD-000V
RF and Wireless - RF Amplifiers XP1026-BD-000V
IC RF AMP GPS 27GHZ-32GHZ

IC RF AMP GPS 27GHZ-32GHZ

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Amplifiers RF Amplifiers
Product Number XP1026-BD-000V XP1026-BD-000V
Product Name mmW Power Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier
Frequency Range 27000 to 32000 MHz 27000 to 32000 MHz
Maximum Gain 21 dB 21 dB
Output Power 32 dBm
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