MACOM mmW Power Amplifier XP1016-V

Description
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Description
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Suppliers

Company
Product
Description
Supplier Links
mmW Power Amplifier - XP1016-V - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
XP1016-V
mmW Power Amplifier XP1016-V
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number XP1016-V
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
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