M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
| Richardson RFPD | DigiKey | |
|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers |
| Product Number | XL1000-BD-000V | XL1000-BD-000V-ND |
| Product Name | mmW LNA | RF Amplifiers |
| Amplifier Type | Low Noise Amplifier | Low Noise Amplifier; Power Amplifier |
| Frequency Range | 20000 to 40000 MHz | |
| Maximum Gain | 20 dB | |
| Output Power | 9 dBm |
