M/A-COM Tech’s three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
MMIC,DIE,BUF,16-30G,
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers |
| Product Number | XB1004-BD-000V | XB1004-BD-000V |
| Product Name | mmW Buffer Amplifier | RF and Wireless - RF Amplifiers |
| Amplifier Type | Buffer | |
| Frequency Range | 16000 to 30000 MHz | 16000 to 30000 MHz |
| Maximum Gain | 18 dB | 18 dB |
| Output Power | 20 dBm |
