Marki Microwave LLC 1 GHz – 22 GHz Low Phase Noise Amplifier APM-7516CH

Description
The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
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Description
The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
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Suppliers

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1 GHz – 22 GHz Low Phase Noise Amplifier - APM-7516CH - Marki Microwave LLC
Morgan Hill, CA, United States
1 GHz – 22 GHz Low Phase Noise Amplifier
APM-7516CH
1 GHz – 22 GHz Low Phase Noise Amplifier APM-7516CH
The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.

The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.

Supplier's Site Datasheet

Technical Specifications

  Marki Microwave LLC
Product Category RF Amplifiers
Product Number APM-7516CH
Product Name 1 GHz – 22 GHz Low Phase Noise Amplifier
Frequency Range 1000 to 22000 MHz
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