MACOM RF & MW Power Amplifier CMPA901A035F

Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.
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Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - CMPA901A035F - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CMPA901A035F
RF & MW Power Amplifier CMPA901A035F
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.

The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.

Supplier's Site
RF Amplifiers - 1465-CMPA901A035F-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC 9GHz ~ 10GHz 440213

RF Amplifier IC 9GHz ~ 10GHz 440213

Buy Now Datasheet
RF and Wireless - RF Amplifiers - CMPA901A035F - Acme Chip Technology Co., Limited
Shenzhen, China
RF and Wireless - RF Amplifiers
CMPA901A035F
RF and Wireless - RF Amplifiers CMPA901A035F
IC RF AMP 9GHZ-10GHZ 440213

IC RF AMP 9GHZ-10GHZ 440213

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number CMPA901A035F 1465-CMPA901A035F-ND CMPA901A035F
Product Name RF & MW Power Amplifier RF Amplifiers RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
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