MACOM RF & MW Power Amplifier CMPA851A012S

Description
CMPA851A012S supports 20 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5 – 10 GHz and supports both defense and commercial-related radar applications. The CMPA851A012S acheives 20 W of saturated output power with 29 dB of large signal gain and can be operated under both pulsed and CW conditions. Packaged in a 5x5 mm plastic overmold QFN, the CMPA851A012S provides superior performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.
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Description
CMPA851A012S supports 20 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5 – 10 GHz and supports both defense and commercial-related radar applications. The CMPA851A012S acheives 20 W of saturated output power with 29 dB of large signal gain and can be operated under both pulsed and CW conditions. Packaged in a 5x5 mm plastic overmold QFN, the CMPA851A012S provides superior performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - CMPA851A012S - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CMPA851A012S
RF & MW Power Amplifier CMPA851A012S
CMPA851A012S supports 20 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5 – 10 GHz and supports both defense and commercial-related radar applications. The CMPA851A012S acheives 20 W of saturated output power with 29 dB of large signal gain and can be operated under both pulsed and CW conditions. Packaged in a 5x5 mm plastic overmold QFN, the CMPA851A012S provides superior performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.

CMPA851A012S supports 20 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5 – 10 GHz and supports both defense and commercial-related radar applications. The CMPA851A012S acheives 20 W of saturated output power with 29 dB of large signal gain and can be operated under both pulsed and CW conditions. Packaged in a 5x5 mm plastic overmold QFN, the CMPA851A012S provides superior performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.

Supplier's Site Datasheet
RF and Wireless - RF Amplifiers - CMPA851A012S - Acme Chip Technology Co., Limited
Shenzhen, China
RF and Wireless - RF Amplifiers
CMPA851A012S
RF and Wireless - RF Amplifiers CMPA851A012S
20W 28V GAN MMIC PA 8.5-10.5GHZ

20W 28V GAN MMIC PA 8.5-10.5GHZ

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Amplifiers RF Amplifiers
Product Number CMPA851A012S CMPA851A012S
Product Name RF & MW Power Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier
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