CMPA5259025S is a gallium-nitride (GaN) HEMT-based monolithic microwaveintegrated circuit (MMIC). GaN has superior properties compared to silicon or galliumarsenide allowing the technology to offer greater power density and wider bandwidthscompared to Si and GaAs devices. This MMIC uses a two-stage reactively matched amplifierdesign approach enabling wide bandwidths to be achieved in a small-footprint, whilemaintaining high gain and efficiency. Operating at 28 V, the 40 W pulsed output poweris designed primarily for use as an output stage for highly integrated AESA radar typearchitectures. In addition the high gain makes it suitable as a drive stage for a multi-deviceline-up using the high power IMFETs as the final stage.
IC AMP RADAR 5.2GHZ-5.9GHZ 32QFN
IC AMP RADAR 5.2GHZ-5.9GHZ 32QFN
RF Amplifier IC Radar 5.2GHz ~ 5.9GHz 32-QFN (5x5)
IC AMP RADAR 5.2GHZ-5.9GHZ 32QFN
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | CMPA5259025S | 1465-CMPA5259025SCT-ND | CMPA5259025S |
| Product Name | RF & MW Power Amplifier | RF Amplifiers | RF and Wireless - RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier | |
| Frequency Range | 5200 to 5900 MHz | 5200 to 5900 MHz | 5200 to 5900 MHz |
| Maximum Gain | 29.5 dB | 30 dB | 30 dB |
| Package Type | QFN | Surface Mount; 32-VFQFN Exposed Pad |
