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Infineon Technologies AG General Purpose LNAs BGB719N7ESD BOARD

Description
The BGB719N7ESD is a wideband Low Noise Amplifier for up to 1 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: - • High performance FM Radio LNA with integrated biasing • Frequency range: 10 MHz to 1 GHz • Supply voltage: 1.5 V to 4.0 V • Low external parts count • High gain at only 2.8 mA current consumption • Integrated active biasing circuit enables stable operating point against temperature-, supply voltage- and processing-variation s • High input compression point • High input impedance • Excellent noise figure • Power-off function • Integrated ESD protection for all pins (1.5 kV, HBM) • Pb-free (RoHS compliant) and halogen-free TSLP-N-6 package (1.26 x 1.4 x 0.37 mm3)
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General Purpose LNAs - BGB719N7ESD BOARD - Infineon Technologies AG
Neubiberg, Germany
General Purpose LNAs
BGB719N7ESD BOARD
General Purpose LNAs BGB719N7ESD BOARD
The BGB719N7ESD is a wideband Low Noise Amplifier for up to 1 GHz applications. Please specify the target frequency range when you order the evaluation board. Summary of Features: - • High performance FM Radio LNA with integrated biasing • Frequency range: 10 MHz to 1 GHz • Supply voltage: 1.5 V to 4.0 V • Low external parts count • High gain at only 2.8 mA current consumption • Integrated active biasing circuit enables stable operating point against temperature-, supply voltage- and processing-variation s • High input compression point • High input impedance • Excellent noise figure • Power-off function • Integrated ESD protection for all pins (1.5 kV, HBM) • Pb-free (RoHS compliant) and halogen-free TSLP-N-6 package (1.26 x 1.4 x 0.37 mm3)

The BGB719N7ESD is a wideband Low Noise Amplifier for up to 1 GHz applications. Please specify the target frequency range when you order the evaluation board.
Summary of Features:
- • High performance FM Radio LNA with integrated biasing • Frequency range: 10 MHz to 1 GHz • Supply voltage: 1.5 V to 4.0 V • Low external parts count • High gain at only 2.8 mA current consumption • Integrated active biasing circuit enables stable operating point against temperature-, supply voltage- and processing-variations • High input compression point • High input impedance • Excellent noise figure • Power-off function • Integrated ESD protection for all pins (1.5 kV, HBM) • Pb-free (RoHS compliant) and halogen-free TSLP-N-6 package (1.26 x 1.4 x 0.37 mm3)

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Technical Specifications

  Infineon Technologies AG
Product Category RF Amplifiers
Product Number BGB719N7ESD BOARD
Product Name General Purpose LNAs
Minimum Gain 13.5 dB
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