CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF Amplifier IC Radar 5.2GHz ~ 5.9GHz 440219
IC AMP RADAR 5.2-5.9GHZ 440219
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | CMPA5259025F | CMPA5259025F-ND | CMPA5259025F |
| Product Name | RF & MW Power Amplifier | RF Amplifiers | RF and Wireless - RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier | |
| Frequency Range | 5200 to 5900 MHz | 5200 to 5900 MHz | 5200 to 5900 MHz |
| Maximum Gain | 31.9 dB | 32.2 dB | 32.2 dB |
| Package Type | Flanged | 440219 |
