RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)
CMPA2735030S is a gallium nitride (GaN) High Electron MobilityTransistor (HEMT) based monolithic microwave integrated circuit(MMIC). GaN has superior properties compared to silicon or galliumarsenide, including higher breakdown voltage, higher saturated electrondrift velocity and higher thermal conductivity. GaN HEMTs also offergreater power density and wider bandwidths compared to Si and GaAstransistors. This MMIC contains a two-stage reactively matched amplifierdesign approach enabling high power and power added efficiency to beachieved in a 5mm x 5mm, surface mount (QFN package).
IC AMP RADAR 2.7GHZ-3.5GHZ 32QFN
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | 1465-CMPA2735030STR-ND | CMPA2735030S | CMPA2735030S |
| Product Name | RF Amplifiers | RF & MW Power Amplifier | RF and Wireless - RF Amplifiers |
| Amplifier Type | Low Noise Amplifier; Power Amplifier | Power Amplifier | |
| Applications | Radar | ||
| RoHS Compliant | RoHS | ||
| Frequency Range | 2700 to 3500 MHz | 2700 to 3500 MHz | 2700 to 3500 MHz |
| Minimum Gain | 34.5 dB | ? to 34.5 dB |
