CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.
RF Amplifier IC 2.5GHz ~ 6GHz 780019
IC RF AMP 2.5GHZ-6GHZ 780019
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | CMPA2560025F | 1465-CMPA2560025F-ND | CMPA2560025F |
| Product Name | RF & MW Power Amplifier | RF Amplifiers | RF and Wireless - RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier | |
| Frequency Range | 2500 to 6000 MHz | 2500 to 6000 MHz | 2500 to 6000 MHz |
| Maximum Gain | 24.3 dB | 24 dB | 24 dB |
| Package Type | Screw-down | 780019 |
