MACOM RF & MW Power Amplifier CMPA1D1E025F

Description
CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.
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Description
CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - CMPA1D1E025F - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CMPA1D1E025F
RF & MW Power Amplifier CMPA1D1E025F
CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.

CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.

Supplier's Site
RF Amplifiers - 1465-CMPA1D1E025F-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC 13.75GHz ~ 14.5GHz 440208

RF Amplifier IC 13.75GHz ~ 14.5GHz 440208

Buy Now Datasheet
RF and Wireless - RF Amplifiers - CMPA1D1E025F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
CMPA1D1E025F
RF and Wireless - RF Amplifiers CMPA1D1E025F
IC AMP 13.75GHZ-14.5GHZ 440208

IC AMP 13.75GHZ-14.5GHZ 440208

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number CMPA1D1E025F 1465-CMPA1D1E025F-ND CMPA1D1E025F
Product Name RF & MW Power Amplifier RF Amplifiers RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Frequency Range 13750 to 14500 MHz 13750 to 14500 MHz 13750 to 14500 MHz
Maximum Gain 24.5 dB 24 dB 24 dB
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