The T0840NC17E is an insulated gate bipolar transistor designed for high-power switching applications, with a collector-emitter voltage rating of 1700 V and a continuous collector current of 840 A. It is packaged in a press-pack format, weighing 0.5 kg, and supports double-sided cooling with a thermal resistance from junction to sink of 38.6 K/kW. The gate-emitter voltage is limited to ±20 V, and the device operates across a junction temperature range of -40 to +125 °C. The IGBT exhibits a collector-emitter saturation voltage of 2.37 to 2.65 V at 840 A and 15 V gate drive, with turn-on and turn-off energies of 0.41 J and 0.7 J respectively under specified conditions.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0840NC17E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0840NC17E |
| VCES | 1700 volts |
