Rochester Electronics IGBTs - Single - IKW30N60DTP IKW30N60DTP

The IKW30N60DTP is a 600 V, 30 A IGBT with a copacked rapid anti-parallel diode, designed for industrial power control applications such as drives, solar inverters, and uninterruptible power supplies. It is packaged in a PG-TO247-3 case and operates with a maximum junction temperature of 175°C. The device features a collector-emitter saturation voltage of 1.6 V at 25°C and low turn-off losses. It is RoHS compliant and qualified according to JEDEC for target applications. Thermal resistance is 0.50 to 0.75 K/W for the IGBT and 0.99 to 1.55 K/W for the diode from junction to case. The gate-emitter threshold voltage ranges from 4.1 V to 5.7 V, and maximum gate-emitter voltage is ±20 V. Switching energy losses are 0.71 mJ for turn-on and 0.42 mJ for turn-off at 25°C. The diode has a reverse recovery time of 76 ns and peak reverse recovery current of 10.2 A under specified conditions.