Rochester Electronics IGBTs - Single - MGW12N120D MGW12N120D

The MGW12N120D is an insulated gate bipolar transistor (IGBT) co-packaged with an anti-parallel soft recovery diode in a TO-247AE package, designed for high-voltage motor control drives and high-frequency switching applications. It has a collector-emitter voltage rating of 1200 Vdc, continuous collector current of 20 A at 25°C and 12 A at 90°C, and a minimum 10 μs short-circuit withstand time. The device features a thermal resistance junction-to-case of 1.0 °C/W for the IGBT and 1.4 °C/W for the diode, and an operating junction temperature range of -55 to 150 °C. The package complies with the CASE 340K-01 STYLE 4 format and has a mounting torque rating of 10 lbf·in. It is rated for AEC-Q200 and RoHS compliance, with a lead temperature limit of 260 °C for soldering.