Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTP60N20X4

Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
  • 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTP60N20X4 - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
Datasheet

Suppliers

Company
Product
Description
Supplier Links
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTP60N20X4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTP60N20X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTP60N20X4
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTP60N20X4
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Interfet - - Micross Components, Inc.
Micross Components, Inc.
Interfet
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1405E - 855034-2SA1405E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1405E
2SA1405E
Specs
Package Type SOT3
View Details
Single Bipolar Transistors - BC807-16W/MIX-ND - DigiKey
Nexperia B.V.
Single Bipolar Transistors
BC807-16W/MIX
Specs
Polarity PNP
Package Type SOT323; SC-70, SOT-323
View Details
2 suppliers
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor - QPD1028 - Qorvo
Qorvo
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
QPD1028
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
Package Type NI-780
Transistor Grade / Operating Range Military
View Details
2 suppliers