The IXTP03N90P is an N-channel enhancement mode MOSFET for high-voltage switching applications, packaged in a TO-220 case. It features a drain-source breakdown voltage of 900 V, a continuous drain current of 300 mA at 25°C, and a maximum power dissipation of 28 W. The on-state resistance RDS(on) is specified at 66 to 80 Ω with VGS = 10 V and ID = 150 mA. The device has a thermal resistance from junction to case of 0.50 °C/W and a gate charge of 4.0 nC. It is rated for operating junction temperatures from -55 °C to 150 °C and meets international standard package requirements. The part is suitable for DC-DC converters, switch-mode power supplies, motor drives, and high-voltage pulse applications.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTP03N90P |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Standard - Series: Polar™ - IXTP03N90P |
| Polarity | N-Channel |
