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Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 47N65C3 47N65C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 075821-47N65C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 415W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 3.9V @ 2.7mA Max Gate Charge: 255nC @ 10V Max Input Capacitance: 7000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 70 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 47N65C3 - 075821-47N65C3 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 47N65C3
075821-47N65C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 47N65C3 075821-47N65C3
Manufacturer: Infineon Technologies Win Source Part Number: 075821-47N65C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 415W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 3.9V @ 2.7mA Max Gate Charge: 255nC @ 10V Max Input Capacitance: 7000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 70 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 075821-47N65C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 415W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 2.7mA
Max Gate Charge: 255nC @ 10V
Max Input Capacitance: 7000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075821-47N65C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 47N65C3
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 415000 milliwatts
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