N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 30V 1.9A TO236AB Product overview: BSH108,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH108,215 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024372-BSH108,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 190pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
MOSFET N-CH 30V 1.9A TO236AB
MOSFET N-CH 30V 1.9A TO236AB
MOSFET, N-CH, 30V, 1.9A, 0.83W, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
30V 1.9A 830mW 120mΩ@10V,1A 2V@1mA N Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSH108,215 | 278-BSH108,215 | 1024372-BSH108,215 | 509324 | 1727-BSH108,215DKR-ND | BSH108,215 | BSH108,215 | 34R3008 | BSH108,215 |
| Product Name | 30 V, N-channel Trench MOSFET | 30V 1.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215 | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 1.9A, 0.83W, Sot-23; Channel Type Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement | ||||||
| Package Type | SOT23; SOT23 SOT23 | Tape & Reel (TR) | SOT3; SOT23; TO-236AB (SOT23) | SOT23; Sot-23 (to-236ab) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | SOT23 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||||
| PD | 830 milliwatts | 830 milliwatts | 830 milliwatts | 830 milliwatts |
