Nexperia B.V. 20 V, P-channel Trench MOSFET BUK4D122-20PX

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a gate-source voltage rating of -12 V to 8 V, and a continuous drain current of -3.2 A at 25 °C. The drain-source on-state resistance is 100 mΩ to 122 mΩ at -4.5 V gate-source voltage and 25 °C. The device operates with a maximum junction temperature of 175 °C and is AEC-Q101 qualified. It features ESD protection exceeding 2 kV HBM and tin-plated solderable side pads for optical inspection.