The IXTH20N65X2 is an N-channel enhancement mode power MOSFET rated for 650 V drain-source voltage and 20 A continuous drain current, housed in a TO-247 package. It features a maximum on-state resistance of 185 mΩ at 25°C, avalanche energy rating of 400 mJ, and a peak gate-source voltage of ±30 V. The device is rated for a junction temperature range of -55°C to +150°C and meets international standard packaging requirements. It is designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTH20N65X2 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
