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Qorvo DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT TGF2023-2-10

Description
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
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Suppliers

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DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-10 - Qorvo
Greensboro, NC, United States
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT TGF2023-2-10
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.

The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.

The part is lead-free and RoHS compliant.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2023-2-10
RF JFET Transistors TGF2023-2-10
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB

RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB

Supplier's Site Datasheet

Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number TGF2023-2-10 TGF2023-2-10
Product Name DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT RF JFET Transistors
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
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