Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.
The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
DC-14GHZ,50W DISCRETE PWR GAN/SI
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
| Qorvo | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors | Transistors |
| Product Number | TGF2023-2-10 | 2312-TGF2023-2-10-ND | TGF2023-2-10 | TGF2023-2-10 |
| Product Name | DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT | RF FETs, MOSFETs | Unclassified | RF JFET Transistors |
| Transistor Technology / Material | GaN on SiC | |||
| Transistor Grade / Operating Range | Military | |||
| Package Type | Die | Die |
