Infineon Technologies AG 6ED003L06FXUMA1

The 6ED003L06-F is an integrated three-phase gate driver for controlling MOSFETs or IGBTs in 600V systems. It is packaged in a PG-DSO28-17 with dimensions of 18.1 mm × 7.6 mm × 1.5 mm. Based on thin-film SOI technology, it withstands negative transients up to -50V and operates with a low-side supply of 13V to 17.5V. Each of the six drivers has CMOS/LSTTL-compatible inputs down to 3.3V and includes 380ns internal deadtime to prevent cross-conduction. Over-current and under-voltage faults trigger a low-active open-drain FAULT output, disabling all outputs. Over-current detection is set via an external resistor at ITRIP, and fault clear delay is adjustable with an RC network at RCIN. Power dissipation is 1.0W, with a maximum junction temperature of 125°C and thermal resistance of 70 K/W.