Texas Instruments Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays EFC4C002NLTDG

Description
Win Source Part Number: 960555-EFC4C002NLTDG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Bulk Standard Package: 1 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 1mA Power - Max: 2.6W Package / Case: 8-XFBGA, WLCSP Supplier Device Package: 8-WLCSP (6x2.5) Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 83 pct. HTSUS: 0000.00.0000 Mfr: Texas Instruments Other Names: ONSTISEFC4C002NLTDG, 2156-EFC4C002NLTDG-T I Base Product Number: EFC4C002
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Description
Win Source Part Number: 960555-EFC4C002NLTDG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Bulk Standard Package: 1 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 1mA Power - Max: 2.6W Package / Case: 8-XFBGA, WLCSP Supplier Device Package: 8-WLCSP (6x2.5) Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 83 pct. HTSUS: 0000.00.0000 Mfr: Texas Instruments Other Names: ONSTISEFC4C002NLTDG, 2156-EFC4C002NLTDG-T I Base Product Number: EFC4C002
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 960555-EFC4C002NLTDG - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
960555-EFC4C002NLTDG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 960555-EFC4C002NLTDG
Win Source Part Number: 960555-EFC4C002NLTDG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Bulk Standard Package: 1 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 1mA Power - Max: 2.6W Package / Case: 8-XFBGA, WLCSP Supplier Device Package: 8-WLCSP (6x2.5) Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 83 pct. HTSUS: 0000.00.0000 Mfr: Texas Instruments Other Names: ONSTISEFC4C002NLTDG, 2156-EFC4C002NLTDG-T I Base Product Number: EFC4C002

Win Source Part Number: 960555-EFC4C002NLTDG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power - Max: 2.6W
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP (6x2.5)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 83 pct.
HTSUS: 0000.00.0000
Mfr: Texas Instruments
Other Names: ONSTISEFC4C002NLTDG,2156-EFC4C002NLTDG-TI
Base Product Number: EFC4C002

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 960555-EFC4C002NLTDG
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Polarity N-Channel
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