The EFC4C002NLTDG is a dual N-channel Power MOSFET in a WLCSP8 package, measuring 6.00 mm × 2.50 mm, designed for 3-cell lithium-ion battery protection. It features a maximum drain-source voltage of 30 V, continuous source current of 30 A, and ultra-low on-resistance of 2.6 mΩ at 10 V gate-source voltage. The device has a total power dissipation of 2.6 W and junction temperature rating of 150°C. It meets RoHS compliance and is optimized for low gate charge and fast switching, with a total gate charge of 45 nC at 4.5 V and input capacitance of 6,200 pF at 15 V. The package is a surface-mount WLCSP with a bottom-view pinout and thermally enhanced ceramic substrate mounting. The part is Pb-free and halogen-free.
Win Source Part Number: 960555-EFC4C002NLTDG
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power - Max: 2.6W
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP (6x2.5)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 83 pct.
HTSUS: 0000.00.0000
Mfr: Texas Instruments
Other Names: ONSTISEFC4C002NLTDG,
Base Product Number: EFC4C002
| Win Source Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 960555-EFC4C002NLTDG |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays |
| Polarity | N-Channel |
