N-channel 60 V, 59 mΩ standard level MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology, qualified to AEC Q101 standard for automotive applications. It supports a maximum drain-source voltage of 60 V, continuous drain current of 17 A at 25 °C, and total power dissipation of 37 W. The device has a drain-source on-state resistance of 59 mΩ at 10 V gate voltage and 25 °C, with a junction temperature rating of 175 °C and repetitive avalanche energy capability of 8.8 mJ. The LFPAK56 package features a drain-thermal pad and four leads with source connections on pins 1, 2, and 3, and gate on pin 4.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK7Y59-60E - N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK7Y59-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7Y59-60EX can be used for catalog matching and distributor lookup.
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| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y59-60EX | 278-BUK7Y59-60EX | 1727-1114-1-ND | BUK7Y59-60EX | BUK7Y59-60EX | BUK7Y59-60EX |
| Product Name | N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 | N-Channel 60 V SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 17000 milliamps | 17000 milliamps | ||||
| VGS(off) | 20 volts | |||||
| PD | 37 milliwatts | 37000 milliwatts |
