N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel JFET, 60V, TO-236 3-Pin Product overview: BSN20BKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSN20BKR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024408-BSN20BKR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 265mA (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 0.49nC @ 4.5V
Max Input Capacitance: 20.2pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB
MOSFET N-CH 60V 265MA TO236AB
MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 265MA TO236AB
60V 265mA 310mW 2.8Ω@10V,200mA 1.4V@250uA N Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSN20BKR | 278-BSN20BKR | 1364797 | 1364845P | 1024408-BSN20BKR | 1727-2341-2-ND | BSN20BKR | 84Y9813 | BSN20BKR | BSN20BKR |
| Product Name | 60 V, N-channel Trench MOSFET | N-Channel 60V MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSN20BKR | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Channel, 60V, 0.265A, Sot-23-3; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 330 milliamps | 265 milliamps | 265 milliamps | |||||||
| VGS(off) | 1 volts | 1.4 volts |
