N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150
MOSFET N-CH 25V 60A 8VSON
25V N-CH NexFET MOSFET, 4mR Rds(on), 60A ID, VSON Product overview: CSD16327Q3 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16327Q3 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030592-CSD16327Q3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (3.3x3.3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1300pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 4 mOhm @ 24A, 8V
Alternative Parts (Cross-Reference): BSZ036NE2LS; CSD16327Q3T; RJK0226DNS-00#J5;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
MOSFET N-Channel NexFET Pwr MOSFET
MOSFET N-CH 25V 60A 8VSON
MOSFET, N-CH, 25V, 60A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power DissipationRoHS Compliant: Yes
| Texas Instruments | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16327Q3 | CSD16327Q3 | 278-CSD16327Q3 | 1030592-CSD16327Q3 | 296-30138-6-ND | CSD16327Q3 | CSD16327Q3 | 29AH3824 |
| Product Name | CSD16327Q3 N-Channel NexFET Power MOSFET | Single FETs, MOSFETs | 25V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16327Q3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 60A, Vson-8; Transistor Polarity Texas Instruments |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| rDS(on) | 0.0048 ohms | 0.0034 ohms | ||||||
| IDSS | 112000 milliamps | 60000 milliamps | 60000 milliamps | |||||
| QG | 6.2 nC |