Texas Instruments CSD16327Q3 N-Channel NexFET Power MOSFET CSD16327Q3

Description
N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150
Request a Quote Datasheet
Description
N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CSD16327Q3 N-Channel NexFET Power MOSFET - CSD16327Q3 - Texas Instruments
Dallas, TX, United States
CSD16327Q3 N-Channel NexFET Power MOSFET
CSD16327Q3
CSD16327Q3 N-Channel NexFET Power MOSFET CSD16327Q3
N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150

N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150

Buy Now Datasheet
Single FETs, MOSFETs - CSD16327Q3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD16327Q3
Single FETs, MOSFETs CSD16327Q3
MOSFET N-CH 25V 60A 8VSON

MOSFET N-CH 25V 60A 8VSON

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16327Q3 - 1030592-CSD16327Q3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16327Q3
1030592-CSD16327Q3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16327Q3 1030592-CSD16327Q3
Manufacturer: Texas Instruments Win Source Part Number: 1030592-CSD16327Q3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSON (3.3x3.3) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 8.4nC @ 4.5V Max Input Capacitance: 1300pF @ 12.5V Maximum Gate-Source Voltage: +10V, -8V Maximum Rds On at Id,Vgs: 4 mOhm @ 24A, 8V Alternative Parts (Cross-Reference): BSZ036NE2LS; CSD16327Q3T; RJK0226DNS-00#J5; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 1030592-CSD16327Q3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (3.3x3.3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1300pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 4 mOhm @ 24A, 8V
Alternative Parts (Cross-Reference): BSZ036NE2LS; CSD16327Q3T; RJK0226DNS-00#J5;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 296-30138-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-30138-6-ND
Single FETs, MOSFETs 296-30138-6-ND
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 296-30138-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-30138-2-ND
Single FETs, MOSFETs 296-30138-2-ND
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 296-30138-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-30138-1-ND
Single FETs, MOSFETs 296-30138-1-ND
N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

Buy Now Datasheet
Mosfet, N-Ch, 25V, 60A, Vson-8; Transistor Polarity Texas Instruments - 29AH3824 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 60A, Vson-8; Transistor Polarity Texas Instruments
29AH3824
Mosfet, N-Ch, 25V, 60A, Vson-8; Transistor Polarity Texas Instruments 29AH3824
MOSFET, N-CH, 25V, 60A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 25V, 60A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power DissipationRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD16327Q3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD16327Q3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD16327Q3
MOSFET N-CH 25V 60A 8VSON

MOSFET N-CH 25V 60A 8VSON

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel NexFET Pwr MOSFET

MOSFET N-Channel NexFET Pwr MOSFET

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Technical Specifications

  Texas Instruments ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number CSD16327Q3 CSD16327Q3 1030592-CSD16327Q3 296-30138-6-ND 29AH3824 CSD16327Q3 CSD16327Q3
Product Name CSD16327Q3 N-Channel NexFET Power MOSFET Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16327Q3 Single FETs, MOSFETs Mosfet, N-Ch, 25V, 60A, Vson-8; Transistor Polarity Texas Instruments Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts 25 volts
rDS(on) 0.0048 ohms 0.0034 ohms
IDSS 112000 milliamps 60000 milliamps 60000 milliamps
QG 6.2 nC
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