Qorvo 1200 V, 23 mohm SiC FET UF4SC120023K4S

Description
The UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200 V, 23 mohm SiC FET - UF4SC120023K4S - Qorvo
Greensboro, NC, United States
1200 V, 23 mohm SiC FET
UF4SC120023K4S
1200 V, 23 mohm SiC FET UF4SC120023K4S
The UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

The UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 qualification in process. Please contact Sales for more information.

Supplier's Site Datasheet
Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs -  - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Manufacturer: Qorvo Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 385W (Tc) Supplier Device Package: TO-247-4 Mounting Type: Through Hole

Manufacturer: Qorvo
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 385W (Tc)
Supplier Device Package: TO-247-4
Mounting Type: Through Hole

Buy Now Datasheet
Single FETs, MOSFETs - 2312-UF4SC120023K4S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UF4SC120023K4S-ND
Single FETs, MOSFETs 2312-UF4SC120023K4S-ND
N-Channel 1200V 53A (Tc) 385W (Tc) Through Hole TO-247-4

N-Channel 1200V 53A (Tc) 385W (Tc) Through Hole TO-247-4

Buy Now Datasheet

Technical Specifications

  Qorvo Win Source Electronics DigiKey
Product Category RF Transistors Transistors Transistors
Product Number UF4SC120023K4S 2312-UF4SC120023K4S-ND
Product Name 1200 V, 23 mohm SiC FET Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs Single FETs, MOSFETs
Transistor Technology / Material 1200 V, 23 mohm SiC FET
Unlock Full Specs
to access all available technical data

Similar Products

DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor - QPD1010 - Qorvo
Specs
Transistor Technology / Material DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
1200 V, 8.6 mohm SiC FET - UF3SC120009K4S - Qorvo
Specs
Transistor Technology / Material 1200 V, 8.6 mohm SiC FET
Transistor Grade / Operating Range Automotive
Package Type TO-247-4L
View Details
5 suppliers
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-10 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
3 suppliers
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type die
View Details