The UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
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Manufacturer: Qorvo
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 385W (Tc)
Supplier Device Package: TO-247-4
Mounting Type: Through Hole
N-Channel 1200V 53A (Tc) 385W (Tc) Through Hole TO-247-4
Qorvo | Win Source Electronics | DigiKey | |
---|---|---|---|
Product Category | RF Transistors | Transistors | Transistors |
Product Number | UF4SC120023K4S | 2312-UF4SC120023K4S-ND | |
Product Name | 1200 V, 23 mohm SiC FET | Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs | Single FETs, MOSFETs |
Transistor Technology / Material | 1200 V, 23 mohm SiC FET |