The AIKB20N60CT is a 600 V, 20 A IGBT in a PG-TO263-3 package with a soft, fast-recovery anti-parallel diode, designed for automotive applications requiring high efficiency and robust switching performance. It has a maximum junction temperature of 150°C, a collector-emitter saturation voltage of 1.5 V at 20 A and 25°C, and a gate-emitter threshold voltage ranging from 4.1 V to 5.7 V. The device meets AEC-Q200 automotive qualification standards and supports short-circuit withstand time of 5 µs at T_j = 150°C. It has a thermal resistance junction-to-case of 0.90 K/W for the IGBT and 1.50 K/W for the diode, and is rated for continuous collector current of 20 A at 100°C case temperature. The device complies with RoHS and is suitable for use in automotive motor drives, air conditioning compressors, and PTC heaters.
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.
Summary of Features
Potential Applications
Applications
The AIKB20N60CT replaces the well known IKB20N60TA
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | AIKB20N60CT |
| Product Name | Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT |
| VCE(on) | 600 volts |
| tr | 14 ns |
| tf | 42 ns |
