Qorvo's TGF2953 is a discrete 2.52 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of 18.2 dB at 3.5 GHz. The maximum power added efficiency is 73.7 % which makes the TGF2953 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
| Qorvo | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | TGF2953 | TGF2953 |
| Product Name | DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT | RF JFET Transistors |
| Transistor Technology / Material | GaN on SiC |
