P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) surface-mounted plastic package measuring 2 mm × 2 mm × 0.65 mm, using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a continuous drain current of -18 A at 25 °C, and a drain-source on-state resistance of 30 mΩ at -4.5 V gate-source voltage and -6 A drain current. It operates with a maximum junction temperature of 175 °C, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM, and is AEC-Q101 qualified.
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR AUTOMOTI
MOSFET, AEC-Q101, P-CH, 20V, DFN2020MD ROHS COMPLIANT: YES
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK4D38-20PX | 1727-BUK4D38-20PXTR-ND | 82AH4500 | BUK4D38-20PX | BUK4D38-20PX |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, 20V, Dfn2020Md Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | 20 volts | |||
| IDSS | -18000 milliamps | 6000 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 19 milliwatts | 2000 milliwatts |
