The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.
Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.
30W, DC - 6GHZ, FLANGED
30W, DC - 6GHZ, FLANGED
30W, DC - 6GHZ, FLANGED
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD1035L | 2312-QPD1035LTR-ND |
| Product Name | DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor | RF FETs, MOSFETs |
| Transistor Technology / Material | DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor |
