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Qorvo 7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor QPD1011

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7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor - QPD1011 - Qorvo
Greensboro, NC, United States
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
QPD1011
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor QPD1011
The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. Evaluation boards are available upon request.

The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD1011
Product Name 7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
Transistor Technology / Material GaN
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