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The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:73A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:500W RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK73N30 | 97K2547 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, To-264; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | |
| V(BR)DSS | 300 volts | |
| IDSS | 73000 milliamps | 73000 milliamps |
