Qorvo DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor TGF2978-SM

Description
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request.
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Description
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor - TGF2978-SM - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor
TGF2978-SM
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor TGF2978-SM
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2978-SM-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2978-SM-ND
RF FETs, MOSFETs 2312-TGF2978-SM-ND
DC-12 GHZ, 20W, 32V GAN RF TR

DC-12 GHZ, 20W, 32V GAN RF TR

Buy Now Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2978-SM
RF JFET Transistors TGF2978-SM
RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB

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Technical Specifications

  Qorvo DigiKey VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors
Product Number TGF2978-SM 2312-TGF2978-SM-ND TGF2978-SM
Product Name DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor RF FETs, MOSFETs RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN 20-VFQFN Exposed Pad
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