Manufacturer: IXYS
Win Source Part Number: 1049629-IXGH42N30C3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 76nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Power Dissipation: 223W
Pulsed Collector Current: 250A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 42A
Total Switching Energy(Ets): 120μJ (on), 150μJ (off)
Turn-on and Turn-off delay time: 21ns/113ns
Testing Conditions: 200V, 21A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Alternative Energy, Industrial
IGBT 300V 223W TO247 Product overview: IXGH42N30C3 from IXYS / Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 223W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 300V, 223W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXGH42N30C3 can be used for catalog matching and distributor lookup.
IGBT PT 300V 223W Through Hole TO-247AD
IGBT 300V 223W TO247
IGBT Transistors 42 Amps 300V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049629-IXGH42N30C3 | 279-IXGH42N30C3 | IXGH42N30C3-ND | IXGH42N30C3 | 401-IXGH42N30C3 | IXGH42N30C3 |
| Product Name | IGBTs - Single - IXGH42N30C3 | 300V 223W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT 300V 223W TO247 | IGBT Transistors |
| VCE(on) | 1.85 volts | 1.54 volts | ||||
| PD | 223000 milliwatts | 223 milliwatts | 223000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; SOT3; TO-247AD (IXGH) | Tube | TO-247; TO-247-3 | |||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube | Tube; Tube | Tube; Tube |
