Integra Technologies, Inc. BiPolar Pallets & Modules IBP1011L900

Description
The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
Description
The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

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BiPolar Pallets & Modules - IBP1011L900 - Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar Pallets & Modules
IBP1011L900
BiPolar Pallets & Modules IBP1011L900
The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category RF Amplifiers
Product Number IBP1011L900
Product Name BiPolar Pallets & Modules
Applications Radar Systems
Frequency Range 1030 MHz
Minimum Gain 9.7 dB
Maximum Gain 9.7 dB
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