Infineon Technologies AG Single FETs, MOSFETs SPU02N60S5BKMA1

Description
N-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21
Request a Quote Datasheet
Description
N-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21
Request a Quote Datasheet

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Single FETs, MOSFETs - SPU02N60S5BKMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPU02N60S5BKMA1-ND
Single FETs, MOSFETs SPU02N60S5BKMA1-ND
N-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21

N-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278339-SPU02N60S5BKMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278339-SPU02N60S5BKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278339-SPU02N60S5BKMA1
Win Source Part Number: 1278339-SPU02N60S5BK MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Standard Package: 75 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 5.5V @ 80µA Power Dissipation (Max): 25W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PG-TO251-3-21 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-SPU02N60S5BKMA1 ,SP000012422,SPU02N6 0S5,SPU02N60S5X,INFI NFSPU02N60S5BKMA1,SP U02N60S5,SPU02N60S5I N,SPU02N60S5XK,SPU02 N60S5IN Base Product Number: SPU02N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278339-SPU02N60S5BKMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3-21
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-SPU02N60S5BKMA1,SP000012422,SPU02N60S5,SPU02N60S5X,INFINFSPU02N60S5BKMA1,SPU02N60S5,SPU02N60S5IN,SPU02N60S5XK,SPU02N60S5IN
Base Product Number: SPU02N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPU02N60S5BKMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPU02N60S5BKMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPU02N60S5BKMA1
MOSFET N-CH 600V 1.8A TO251-3

MOSFET N-CH 600V 1.8A TO251-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number SPU02N60S5BKMA1-ND 1278339-SPU02N60S5BKMA1 SPU02N60S5BKMA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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