Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N60S5 SPP02N60S5

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065947-SPP02N60S5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5.5V @ 80μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 065947-SPP02N60S5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5.5V @ 80μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N60S5 - 065947-SPP02N60S5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N60S5
065947-SPP02N60S5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N60S5 065947-SPP02N60S5
Manufacturer: Infineon Technologies Win Source Part Number: 065947-SPP02N60S5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5.5V @ 80μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 065947-SPP02N60S5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 80μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 240pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065947-SPP02N60S5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N60S5
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 25000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1709044 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
Package Type Soic
View Details
CSD16407Q5C DualCool? N-Channel NexFET? Power MOSFET - CSD16407Q5C - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 25 volts
rDS(on) 0.0033 ohms
View Details
5 suppliers
FET, MOSFET Arrays - AUIRF7341Q-ND - DigiKey
Infineon Technologies AG
Specs
Package Type "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD210800ASCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Precision Zero Threshold
V(BR)DSS 10 volts
View Details
4 suppliers