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Advanced Linear Devices, Inc. QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY ALD1117SAL

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Product
Description
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QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY - ALD1117SAL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1117SAL
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY ALD1117SAL
MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - 1014-1049-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1014-1049-ND
FET, MOSFET Arrays 1014-1049-ND
Mosfet Array 2 P-Channel (Dual) Matched Pair 10.6V 500mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) Matched Pair 10.6V 500mW Surface Mount 8-SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ALD1117SAL - 1051997-ALD1117SAL - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ALD1117SAL
1051997-ALD1117SAL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ALD1117SAL 1051997-ALD1117SAL
Manufacturer: Advanced Linear Devices Inc. Win Source Part Number: 1051997-ALD1117SAL Packaging: Tube/Rail Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 0°C to 70°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 500mW Drain-Source Breakdown Voltage: 10.6V Gate-Source Threshold Voltage: 1V @ 1μA Max Input Capacitance: 3pF @ 5V Maximum Rds On at Id,Vgs: 1800 Ohm @ 5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Advanced Linear Devices Inc.
Win Source Part Number: 1051997-ALD1117SAL
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 0°C to 70°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 10.6V
Gate-Source Threshold Voltage: 1V @ 1μA
Max Input Capacitance: 3pF @ 5V
Maximum Rds On at Id,Vgs: 1800 Ohm @ 5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD1117SAL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD1117SAL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD1117SAL
MOSFET 2P-CH 10.6V 8SOIC

MOSFET 2P-CH 10.6V 8SOIC

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ALD1117SAL 1014-1049-ND 1051997-ALD1117SAL ALD1117SAL
Product Name QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - ALD1117SAL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts 10.6 volts
IDSS -2 milliamps
rDS(on) 1800 ohms
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