The SPB80N03S2L-05 is an N-channel MOSFET designed for high-current switching applications. It is packaged in a PG-TO263-3-2 (TO-263) surface-mount case with a 3-lead configuration. The device has a drain-source breakdown voltage of 30 V, a continuous drain current of 80 A at 25°C, and a maximum on-state resistance of 4.9 mΩ at 10 V gate-source voltage and 55 A drain current. It supports a maximum power dissipation of 167 W, operates from -55°C to 175°C junction temperature, and is avalanche rated with 325 mJ single-pulse energy. The gate-source voltage is rated at ±20 V, and the reverse diode can handle 80 A continuous and 320 A pulsed forward current. The transistor meets IEC 68-1 climatic category 55/175/56 and features a dv/dt rating of 6 kV/µs.
Win Source Part Number: 1278300-SPB80N03S2L-
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 2V @ 110µA
Power Dissipation (Max): 167W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
Mfr: Infineon Technologies
Other Names: SPB80N03S2L-05G,SPB8
Base Product Number: SPB80N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1278300-SPB80N03S2L-05 G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
