ALD110800APCL is a quad N-channel zero threshold EPAD precision matched pair MOSFET array in a 16-pin plastic DIP package, measuring 18.93 to 21.33 mm in length and 7.62 to 8.26 mm in width. It features a zero gate-source threshold voltage of 0.00V ±0.02V with a typical offset voltage of 3.8 mV, enabling operation in ultra-low voltage environments. The device exhibits a drain-source on resistance of 104 kΩ at VGS = 0.0V and VDS = 0.1V, and maintains matched characteristics across temperature with a typical VGS(th) temperature coefficient of -1.7 mV/°C. Input capacitance is 2.5 pF, gate leakage current is less than 200 pA at 25°C, and drain-source voltage rating is 10.6V. Maximum power dissipation is 500 mW, and the operating temperature range is 0°C to +70°C. The part meets lead-free (RoHS) requirements as indicated by the 'L' suffix in the ordering code.
MOSFET Array 4 N-Channel, Matched Pair 10.6V - 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 500mW Through Hole 16-PDIP
MOSFET 4N-CH 10.6V 16DIP
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD110800APCL | 1014-1016-ND | ALD110800APCL | ALD110800APCL |
| Product Name | QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 3 milliamps |
