Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA11N80C3 SPA11N80C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 030741-SPA11N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: SPA11N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 680μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 1600pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): TK12A80W; TK12A80W,S4X; STFU13N80K5; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 030741-SPA11N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: SPA11N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 680μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 1600pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): TK12A80W; TK12A80W,S4X; STFU13N80K5; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA11N80C3 - 030741-SPA11N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA11N80C3
030741-SPA11N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA11N80C3 030741-SPA11N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 030741-SPA11N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: SPA11N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 3.9V @ 680μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 1600pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 7.1A, 10V Alternative Parts (Cross-Reference): TK12A80W; TK12A80W,S4X; STFU13N80K5; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 030741-SPA11N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Family Name: SPA11N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 680μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 1600pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 7.1A, 10V
Alternative Parts (Cross-Reference): TK12A80W; TK12A80W,S4X; STFU13N80K5;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
800V 11A MOSFET Transistor
2088-SPA11N80C3
800V 11A MOSFET Transistor 2088-SPA11N80C3
MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3 Product overview: SPA11N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPA11N80C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3 Product overview: SPA11N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPA11N80C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3

MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3

Buy Now Datasheet
Transistor - 38342472 - Radwell International
Willingboro, NJ, United States
Transistor
38342472
Transistor 38342472
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 800V, 0.45OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB FULLY ISOLATED, 11N80C3 MARKING. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 800V, 0.45OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB FULLY ISOLATED, 11N80C3 MARKING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 030741-SPA11N80C3 2088-SPA11N80C3 SPA11N80C3 38342472
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA11N80C3 800V 11A MOSFET Transistor MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 34000 milliwatts 34 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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