The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
RF JFET Transistors DC-12 GHz, 10W, 32V GaN RF Tr
| Qorvo | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD1022 | QPD1022 |
| Product Name | DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor | Transistors |
| Transistor Technology / Material | GaN |
