Qorvo DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor QPD1022

Description
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
  • DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor - QPD1022 - Qorvo
    Qorvo
  • Transistors - QPD1022 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor - QPD1022 - Qorvo
Qorvo
Greensboro, NC, United States
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
QPD1022
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor QPD1022
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
Transistors - QPD1022 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
QPD1022
Transistors QPD1022
RF JFET Transistors DC-12 GHz, 10W, 32V GaN RF Tr

RF JFET Transistors DC-12 GHz, 10W, 32V GaN RF Tr

Supplier's Site Datasheet

Technical Specifications

  Qorvo ODG (Origin Data Global)
Product Category RF Transistors Transistors
Product Number QPD1022 QPD1022
Product Name DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor Transistors
Transistor Technology / Material GaN
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