Infineon Technologies AG Single FETs, MOSFETs SI3443DV

The SI3443DV is a P-channel MOSFET designed for battery and load management applications, housed in a TSOP-6 surface-mount package. It has a drain-source voltage rating of -20 V, continuous drain current of -4.4 A at 25°C and -3.5 A at 70°C, and a maximum on-resistance of 0.090 Ω at -2.5 V gate drive. Power dissipation is 2.0 W at 25°C and 1.3 W at 70°C, with a junction-to-ambient thermal resistance of 62.5 °C/W. The device supports a pulsed drain current of -20 A and single-pulse avalanche energy of 31 mJ. It is rated for operation from -55°C to +150°C. The package is optimized for space-constrained designs, offering 60% lower on-resistance than a comparable SOT-23 device. The part meets RoHS standards.